Bipolar Junction Transistor(BJT)
History:
The Bipolar Junction transistor(BJT) most famous electronic device in Integrated Circuit (IC). The invention of Bipolar Junction Transistor(BJT) in 1948 by Bell Telephone Laboratories. It was not until the 1970s and 1980s that is became a serious competitor to the Bipolar Junction transistor(BJT).
Which create a new era for the Electronic device history. In 2012, 60 million transistor were built for each man and women. Integrated circuit is not thinkable without it. Today digital world electronics device like smart phone, personal computer, telephone, calculator, televisions circuit board built by Bipolar Junction transistor(BJT).
Bipolar Junction Transistor(BJT):
Bipolar Junction Transistor(BJT) is one kind of semiconductor device that have three separately doped region. BJT is three terminal device which called Emitter, Base and Collector. Generally BJT is used to amplify, switch electronic signals and electrical power Oscillator.
There are two type of transistor :
(a) P-N-P transistor.
(b) N-P-N transistor.
BJT have two pn junctions. One is emitter-base Junction (EBJ) another one is Collector-base junction(CBJ). In forward and reverse bias condition different mode of operation of obtained. There are different mode of operation is given below:
PNP Transistor:
N-doped to the base between two P-Doped region. A small current entering the base is amplified to produce a large to the collector and base.If the base is lower voltage than the emitter current flow from emitter to collector.
NPN Transistor:
N-doped to the base between two P-Doped region. A small current entering the base is amplified to produce a large to the collector and base.If the base is lower voltage than the emitter current flow from emitter to collector.
NPN Transistor:
P-doped on the base between two N-doped region. A small current entering the base is amplified to produce a large collector or emitter current. If the base as at a higher voltage then the emitter current flow collector to emitter.
